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| MJD5731 Preferred Device High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODETM power supply drivers and other switching applications. * 350 V (Min) - VCEO(sus) * 1.0 A Rated Collector Current * PNP Complements to the MJD47 thru MJD50 Series http://onsemi.com MAXIMUM RATINGS Rating Symbol VCEO VEB IC MJD5731 350 5 Unit Vdc Vdc Adc SILICON POWER TRANSISTORS 1.0 A, 350 V 15 W II IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIII II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIII Collector-Emitter Voltage Emitter-Base Voltage Collector CurrentContinuous Peak 1.0 3.0 Total Power Dissipation @ TC = 25C Derate above 25C PD 15 0.12 Watts W/C Watts W/C mJ C Total Power Dissipation (1) @ TA = 25C Derate above 25C PD 1.56 0.0125 20 Unclamped Inductive Load Energy (See Figure ) Operating and Storage Junction Temperature Range E TJ, Tstg - 55 to 150 MARKING DIAGRAM J5731 DPAK CASE 369 J5731 DPAK CASE 369A Style 1 THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA TL Max Unit Thermal Resistance, Junction-to-Case 8.33 80 C/W C/W C Thermal Resistance, Junction-to-Ambient (Note 1) Lead Temperature for Soldering 260 1. These ratings are applicable when surface mounted on the minimum pad size recommended. xx A WL, L YY, Y WW, W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device MJD5731T4 Package DPAK Shipping 2500/ Tape & Reel Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 0 Publication Order Number: MJD5731/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 2) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current Gain - Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage (Note 2) MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS Characteristic (VCE = 350 Vdc, VBE = 0) (VCE = 250 Vdc, IB = 0) (VBE = 5.0 Vdc, IC = 0) (IC = 30 mAdc, IB = 0) http://onsemi.com MJD5731 2 inches mm VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICES hFE hfe fT Min 350 25 10 30 10 - 0.01 Max 175 - 1.5 1.0 0.5 0.1 - mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc - - 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 MJD5731 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 hFE, DC CURRENT GAIN 50 30 20 10 5.0 3.0 2.0 0.02 0.03 VCE = 10 V TJ = 150C 25C -55 C 1.4 1.2 1 0.8 0.6 0.4 0.2 VCE(sat)) @ IC/IB = 5.0 0.05 0.2 0.3 0.1 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 -55 C 150C TJ = 25C 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 0 0.02 0.03 Figure 1. DC Current Gain 1.4 1.2 1.0 V, VOLTAGE (V) VBE(sat) @ IC/IB = 5.0 0.8 25C 0.6 0.4 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 150C TJ = - 55C V, VOLTAGE (VOLTS) 1.4 1.2 1 0.8 0.6 0.4 0.2 Figure 2. Collector-Emitter Saturation Voltage VBE(sat) @ IC/IB = 5 V VBE(on) @ VCE = 4 V TJ = 25C VCE(sat) @ IC/IB = 5 V 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) 1 2 0 0.02 IC, COLLECTOR CURRENT (AMPS) Figure 3. Base-Emitter Voltage Figure 4. "On" Voltages 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25C 1.0 ms dc 500 ms 100 ms 0.05 0.02 0.01 5.0 10 20 30 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Forward Bias Safe Operating Area http://onsemi.com 3 MJD5731 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k 23 5 t, TIME (ms) 10 20 30 Figure 6. Thermal Response TURN-ON PULSE t1 VBE(off) Vin APPROX . -11 V t2 t3 51 Cjd << Ceb 0V t1 7.0 ns 100 t2 < 500 ms t3 < 15 ns VCC RC SCOPE Vin RB APPROX. +9.0 V DUTY CYCLE 2.0% +4.0 V TURN-OFF PULSE Figure 7. Switching Time Equivalent Circuit 1.0 0.5 0.3 t, TIME ( s) 0.2 0.1 0.05 0.03 0.02 0.01 0.02 0.03 td tr TJ = 25C VCC = 200 V IC/IB = 5.0 t, TIME ( s) 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.05 0.02 0.03 tf ts TJ = 25C VCC = 200 V IC/IB = 5.0 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 Figure 8. Turn-On Resistive Switching Times Figure 9. Resistive Turn-Off Switching Times http://onsemi.com 4 MJD5731 Test Circuit VCE MONITOR MJE171 INPUT 50 50 VBB1 = 10 V + - RBB2 = 100 W RBB1 = 150 W TUT + - VBB2 = 0 RS = 0.1 W 100 mH VCC = 20 V IC MONITOR INPUT VOLTAGE Voltage and Current Waveforms tw 3 ms (SEE NOTE 1) 0V -5 V 100 ms 0.63 A COLLECTOR CURRENT 0 V VCER COLLECTOR VOLTAGE 10 V VCE(sat) Figure 10. Inductive Load Switching http://onsemi.com 5 MJD5731 PACKAGE DIMENSIONS DPAK CASE 395A-13 ISSUE AB NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- -TB V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T M STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 6 MJD5731 PACKAGE DIMENSIONS DPAK CASE 395-07 ISSUE M B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -TSEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T http://onsemi.com 7 MJD5731 SWITCHMODE is a trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJD5731/D |
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